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All prices are in JPY.
Price Break Unit Price Extended Price
1 235.00000 ¥235
10 210.50000 ¥2,105
25 198.64000 ¥4,966
100 169.25000 ¥16,925
500 139.05400 ¥69,527
1,000 119.18800 ¥119,188

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Alternate Package

SI4490DY-T1-GE3

Datasheet
Digi-Key Part Number 742-SI4490DY-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI4490DY-T1-GE3
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Description MOSFET N-CH 200V 2.85A 8SO
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Detailed Description

N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SO

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Customer Reference
Documents & Media
Datasheets SI4490DY
HTML Datasheet SI4490DY
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.85A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.56W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4490
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 742-SI4490DY-T1-GE3CT
SI4490DY-T1-GE3CT
SI4490DY-T1-GE3CT-ND