SI4435FDY-T1-GE3 P-Channel 30V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC
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All prices are in JPY.
Price Break Unit Price Extended Price
1 62.00000 ¥62
10 50.70000 ¥507
100 34.49000 ¥3,449
500 25.87000 ¥12,935
1,000 19.40300 ¥19,403

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Alternate Package

SI4435FDY-T1-GE3

Datasheet
Digi-Key Part Number SI4435FDY-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI4435FDY-T1-GE3
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Description MOSFET P-CH 30V 12.6A 8SOIC
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Manufacturer Standard Lead Time 52 Weeks
Detailed Description

P-Channel 30V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC

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Customer Reference
Documents & Media
Datasheets SI4435FDY
Featured Product P-Channel MOSFETs
HTML Datasheet SI4435FDY
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET® Gen III
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
FET Feature -
Power Dissipation (Max) 4.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4435
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4435FDY-T1-GE3CT