JPY | USD

Price & Procurement
6,668 In Stock
Can ship immediately
 

Quantity

Add to List

All prices are in JPY.
Price Break Unit Price Extended Price
1 176.00000 ¥176
10 158.20000 ¥1,582
25 150.16000 ¥3,754
100 123.35000 ¥12,335
500 101.89000 ¥50,945
1,000 80.43900 ¥80,439

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI4427BDY-T1-E3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 5,000 - Immediate
  • Unit Price: ¥75.07640
  • Digi-Reel®  : SI4427BDY-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 6,668 - Immediate
  • Unit Price: Digi-Reel®

SI4427BDY-T1-E3

Datasheet
Digi-Key Part Number SI4427BDY-T1-E3CT-ND
Copy  
Manufacturer

Vishay Siliconix

Copy  
Manufacturer Part Number SI4427BDY-T1-E3
Copy  
Description MOSFET P-CH 30V 9.7A 8SO
Copy  
Detailed Description

P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Copy  
Customer Reference
Documents & Media
Datasheets SI4427BDY
HTML Datasheet SI4427BDY
EDA / CAD Models SI4427BDY-T1-E3 by SnapEDA
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 12.6A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70nC @ 4.5V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4427
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
You May Also Be Interested In

FDS6675BZ

MOSFET P-CH 30V 11A 8SOIC

ON Semiconductor

¥90.00000 Details
Additional Resources
Standard Package 1
Other Names SI4427BDY-T1-E3CT