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8,414 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 231.00000 ¥231
10 206.80000 ¥2,068
25 195.16000 ¥4,879
100 166.26000 ¥16,626
500 136.59800 ¥68,299
1,000 113.18100 ¥113,181

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Alternate Package
  • Tape & Reel (TR)  : SI4190ADY-T1-GE3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 7,500 - Immediate
  • Unit Price: ¥106.43960
  • Digi-Reel®  : SI4190ADY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 8,414 - Immediate
  • Unit Price: Digi-Reel®

SI4190ADY-T1-GE3

Datasheet
Digi-Key Part Number SI4190ADY-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI4190ADY-T1-GE3
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Description MOSFET N-CH 100V 18.4A 8SO
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Detailed Description

N-Channel 100V 18.4A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC

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Customer Reference
Documents & Media
Datasheets SI4190ADY
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
EDA / CAD Models SI4190ADY-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1970pF @ 50V
FET Feature -
Power Dissipation (Max) 3W (Ta), 6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4190
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4190ADY-T1-GE3CT