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Price & Procurement
14,099 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 142.00000 ¥142
10 126.10000 ¥1,261
25 119.72000 ¥2,993
100 98.34000 ¥9,834
500 81.24400 ¥40,622
1,000 64.13900 ¥64,139

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI4116DY-T1-GE3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 12,500 - Immediate
  • Unit Price: ¥59.86320
  • Digi-Reel®  : SI4116DY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 14,099 - Immediate
  • Unit Price: Digi-Reel®

SI4116DY-T1-GE3

Datasheet
Digi-Key Part Number SI4116DY-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI4116DY-T1-GE3
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Description MOSFET N-CH 25V 18A 8SO
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO

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Customer Reference
Documents & Media
Datasheets SI4116DY
HTML Datasheet SI4116DY
EDA / CAD Models SI4116DY-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1925pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4116
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4116DY-T1-GE3CT