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SI4103DY-T1-GE3 P-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO
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1,320 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 96.00000 ¥96.00
10 83.90000 ¥839.00
25 78.80000 ¥1,970.00
100 64.33000 ¥6,433.00
500 50.85200 ¥25,426.00
1,000 40.68200 ¥40,682.00

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Alternate Package
  • Tape & Reel (TR)  : SI4103DY-T1-GE3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 0
  • Unit Price: ¥38.13960
  • Digi-Reel®  : SI4103DY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 1,320 - Immediate
  • Unit Price: Digi-Reel®

SI4103DY-T1-GE3

Datasheet
Digi-Key Part Number SI4103DY-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI4103DY-T1-GE3
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Description MOSFET P-CH 30V 14A/16A 8SO
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Manufacturer Standard Lead Time 47 Weeks
Detailed Description

P-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO

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Customer Reference
Documents & Media
Datasheets SI4103DY
Featured Product P-Channel MOSFETs
HTML Datasheet SI4103DY
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET® Gen III
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 5.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4103
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4103DY-T1-GE3CT