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SI3552DV-T1-E3 Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP
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All prices are in JPY.
Price Break Unit Price Extended Price
1 76.00000 ¥76.00
10 66.00000 ¥660.00
25 62.00000 ¥1,550.00
100 50.60000 ¥5,060.00
500 39.99600 ¥19,998.00
1,000 31.99700 ¥31,997.00

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Alternate Package
  • Tape & Reel (TR)  : SI3552DV-T1-E3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 0
  • Unit Price: ¥29.99733

SI3552DV-T1-E3

Datasheet
Digi-Key Part Number SI3552DV-T1-E3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI3552DV-T1-E3
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Description MOSFET N/P-CH 30V 6TSOP
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Detailed Description

Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP

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Customer Reference
Documents & Media
Datasheets SI3552DV
HTML Datasheet SI3552DV
EDA / CAD Models SI3552DV-T1-E3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A
Rds On (Max) @ Id, Vgs 105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.15W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Base Part Number SI3552
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI3552DV-T1-E3CT