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SI3127DV-T1-GE3 P-Channel 60V 3.5A (Ta), 13A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Price & Procurement
22,943 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 51.00000 ¥51
10 43.60000 ¥436
25 40.68000 ¥1,017
100 30.21000 ¥3,021
500 23.58400 ¥11,792
1,000 19.16900 ¥19,169

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI3127DV-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 21,000 - Immediate
  • Unit Price: ¥18.00733
  • Digi-Reel®  : SI3127DV-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 22,943 - Immediate
  • Unit Price: Digi-Reel®

SI3127DV-T1-GE3

Datasheet
Digi-Key Part Number SI3127DV-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI3127DV-T1-GE3
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Description MOSFET P-CHAN 60V TSOP6S
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

P-Channel 60V 3.5A (Ta), 13A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

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Customer Reference
Documents & Media
Datasheets SI3127DV
HTML Datasheet SI3127DV
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 89mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 833pF @ 20V
FET Feature -
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Part Number SI3127
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI3127DV-T1-GE3CT