SI2374DS-T1-GE3 N-Channel 20V 4.5A (Ta), 5.9A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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All prices are in JPY.
Price Break Unit Price Extended Price
1 60.00000 ¥60
10 44.60000 ¥446
25 40.32000 ¥1,008
100 27.84000 ¥2,784
500 19.05000 ¥9,525
1,000 14.65400 ¥14,654

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Alternate Package
  • Tape & Reel (TR)  : SI2374DS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 0
  • Unit Price: ¥13.18867

SI2374DS-T1-GE3

Datasheet
Digi-Key Part Number SI2374DS-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI2374DS-T1-GE3
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Description MOSFET N-CH 20V 4.5A/5.9A SOT23
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Detailed Description

N-Channel 20V 4.5A (Ta), 5.9A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets SI2374DS
Environmental Information Material Compliance
REACH 211 Cert, SVHC
PCN Assembly/Origin Mult Dev Mfg/Test Qual 11/Sep/2019
HTML Datasheet SI2374DS
EDA / CAD Models SI2374DS-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 735pF @ 10V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2374
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2374DS-T1-GE3CT