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SI2365EDS-T1-GE3 P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236
Price & Procurement
50,149 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 43.00000 ¥43
10 32.40000 ¥324
25 29.12000 ¥728
100 15.37000 ¥1,537
500 13.61800 ¥6,809
1,000 10.59800 ¥10,598

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Alternate Package
  • Tape & Reel (TR)  : SI2365EDS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 48,000 - Immediate
  • Unit Price: ¥9.69733
  • Digi-Reel®  : SI2365EDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 50,149 - Immediate
  • Unit Price: Digi-Reel®

SI2365EDS-T1-GE3

Datasheet
Digi-Key Part Number SI2365EDS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2365EDS-T1-GE3
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Description MOSFET P-CH 20V 5.9A TO-236
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236

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Customer Reference
Documents & Media
Datasheets SI2365EDS
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Wafer Site 12/Sep/2018
HTML Datasheet SI2365EDS
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 8V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2365
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2365EDS-T1-GE3CT