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57,512 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 45.00000 ¥45
10 35.00000 ¥350
25 33.44000 ¥836
100 21.00000 ¥2,100
500 19.44000 ¥9,720
1,000 13.21800 ¥13,218

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Alternate Package
  • Tape & Reel (TR)  : SI2356DS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 57,000 - Immediate
  • Unit Price: ¥12.16900
  • Digi-Reel®  : SI2356DS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 57,512 - Immediate
  • Unit Price: Digi-Reel®

SI2356DS-T1-GE3

Datasheet
Digi-Key Part Number SI2356DS-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI2356DS-T1-GE3
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Description MOSFET N-CH 40V 4.3A TO236
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Manufacturer Standard Lead Time 19 Weeks
Detailed Description

N-Channel 40V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount TO-236

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Customer Reference
Documents & Media
Datasheets SI2356DS
PCN Assembly/Origin Mult Dev Mfg/Test Qual 11/Sep/2019
HTML Datasheet SI2356DS
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 51mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 370pF @ 20V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2356
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2356DS-T1-GE3CT