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SI2337DS-T1-E3 P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
19,470 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 108.00000 ¥108
10 95.90000 ¥959
25 90.96000 ¥2,274
100 68.23000 ¥6,823
500 57.83000 ¥28,915
1,000 47.10800 ¥47,108

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Alternate Package
  • Tape & Reel (TR)  : SI2337DS-T1-E3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 19,470 - Immediate
  • Unit Price: ¥46.45833
  • Digi-Reel®  : SI2337DS-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 19,470 - Immediate
  • Unit Price: Digi-Reel®

SI2337DS-T1-E3

Datasheet
Digi-Key Part Number SI2337DS-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI2337DS-T1-E3
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Description MOSFET P-CH 80V 2.2A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets SI2337DS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI2337DS
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 40V
FET Feature -
Power Dissipation (Max) 760mW (Ta), 2.5W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2337
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2337DS-T1-E3CT