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SI2319DS-T1-E3 P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
30,827 In Stock
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Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 80.00000 ¥80
10 70.90000 ¥709
25 66.60000 ¥1,665
100 48.33000 ¥4,833
500 40.38400 ¥20,192
1,000 34.36900 ¥34,369

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Alternate Package
  • Tape & Reel (TR)  : SI2319DS-T1-E3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 27,000 - Immediate
  • Unit Price: ¥32.22100
  • Digi-Reel®  : SI2319DS-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 30,827 - Immediate
  • Unit Price: Digi-Reel®

SI2319DS-T1-E3

Datasheet
Digi-Key Part Number SI2319DS-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI2319DS-T1-E3
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Description MOSFET P-CH 40V 2.3A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets SI2319DS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI2319DS
EDA / CAD Models SI2319DS-T1-E3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 20V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2319
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2319DS-T1-E3CT