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Price & Procurement
86,751 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 49.00000 ¥49
10 41.80000 ¥418
25 39.04000 ¥976
100 29.01000 ¥2,901
500 22.65200 ¥11,326
1,000 18.41200 ¥18,412

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Alternate Package
  • Tape & Reel (TR)  : SI2312CDS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 86,500 - Immediate
  • Unit Price: ¥16.45900
  • Digi-Reel®  : SI2312CDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 86,751 - Immediate
  • Unit Price: Digi-Reel®

SI2312CDS-T1-GE3

Datasheet
Digi-Key Part Number SI2312CDS-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI2312CDS-T1-GE3
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Description MOSFET N-CH 20V 6A SOT23-3
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Manufacturer Standard Lead Time 19 Weeks
Detailed Description

N-Channel 20V 6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets SI2312CDS
PCN Assembly/Origin Mult Dev Mfg/Test Qual 11/Sep/2019
HTML Datasheet SI2312CDS
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 31.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 865pF @ 10V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2312
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2312CDS-T1-GE3CT