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273 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 66.00000 ¥66
10 56.70000 ¥567
100 42.37000 ¥4,237
500 33.29800 ¥16,649
1,000 25.73000 ¥25,730

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Alternate Package
  • Digi-Reel®  : SI2312BDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 773 - Immediate
  • Unit Price: Digi-Reel®

SI2312BDS-T1-GE3

Datasheet
Digi-Key Part Number SI2312BDS-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI2312BDS-T1-GE3
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Description MOSFET N-CH 20V 3.9A SOT23-3
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Detailed Description

N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets Si2312BDS
Environmental Information Material Compliance
REACH 211 Cert, SVHC
HTML Datasheet Si2312BDS
EDA / CAD Models SI2312BDS-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2312
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2312BDS-T1-GE3CT