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SI2301BDS-T1-E3 P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
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12,973 In Stock
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Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 39.00000 ¥39
10 31.60000 ¥316
25 28.92000 ¥723
100 18.15000 ¥1,815
500 16.80400 ¥8,402
1,000 11.42700 ¥11,427

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Alternate Package
  • Tape & Reel (TR)  : SI2301BDS-T1-E3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 9,000 - Immediate
  • Unit Price: ¥10.95633
  • Digi-Reel®  : SI2301BDS-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 12,973 - Immediate
  • Unit Price: Digi-Reel®

SI2301BDS-T1-E3

Datasheet
Digi-Key Part Number SI2301BDS-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI2301BDS-T1-E3
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Description MOSFET P-CH 20V 2.2A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets SI2301BDS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI2301BDS
EDA / CAD Models SI2301BDS-T1-E3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 100mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 375pF @ 6V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2301
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2301BDS-T1-E3CT