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35,088 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 65.00000 ¥65
10 55.30000 ¥553
100 41.25000 ¥4,125
500 32.41400 ¥16,207
1,000 25.04700 ¥25,047

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Alternate Package
  • Tape & Reel (TR)  : SI1050X-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 33,000 - Immediate
  • Unit Price: ¥22.83733
  • Digi-Reel®  : SI1050X-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 35,088 - Immediate
  • Unit Price: Digi-Reel®

SI1050X-T1-GE3

Datasheet
Digi-Key Part Number SI1050X-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI1050X-T1-GE3
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Description MOSFET N-CH 8V 1.34A SC89-6
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Detailed Description

N-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

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Customer Reference
Documents & Media
Datasheets SI1050X
Environmental Information Material Compliance
REACH 211 Cert, SVHC
PCN Design/Specification New Material 24/Mar/2021
HTML Datasheet SI1050X
EDA / CAD Models SI1050X-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 1.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 86mOhm @ 1.34A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 5V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 585pF @ 4V
FET Feature -
Power Dissipation (Max) 236mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89 (SOT-563F)
Package / Case SOT-563, SOT-666
Base Part Number SI1050
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1050X-T1-GE3CT