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SI1029X-T1-GE3 Mosfet Array N and P-Channel 60V 305mA, 190mA 250mW Surface Mount SC-89-6
Price & Procurement
98,336 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 59.00000 ¥59
10 50.50000 ¥505
25 47.28000 ¥1,182
100 35.10000 ¥3,510
500 27.40800 ¥13,704
1,000 22.27700 ¥22,277

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Alternate Package
  • Tape & Reel (TR)  : SI1029X-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 96,000 - Immediate
  • Unit Price: ¥19.91400
  • Digi-Reel®  : SI1029X-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 98,336 - Immediate
  • Unit Price: Digi-Reel®

SI1029X-T1-GE3

Datasheet
Digi-Key Part Number SI1029X-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI1029X-T1-GE3
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Description MOSFET N/P-CH 60V SC89-6
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Manufacturer Standard Lead Time 19 Weeks
Detailed Description

Mosfet Array N and P-Channel 60V 305mA, 190mA 250mW Surface Mount SC-89-6

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Customer Reference
Documents & Media
Datasheets Si1029X
HTML Datasheet Si1029X
EDA / CAD Models SI1029X-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 305mA, 190mA
Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SC-89-6
Base Part Number SI1029
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1029X-T1-GE3CT