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All prices are in JPY.
Price Break Unit Price Extended Price
3,000 12.82700 ¥38,481
6,000 12.11417 ¥72,685

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Alternate Package

SI1012CR-T1-GE3

Datasheet
Digi-Key Part Number SI1012CR-T1-GE3TR-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI1012CR-T1-GE3
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Description MOSFET N-CH 20V SC75A
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Detailed Description

N-Channel 20V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A

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Customer Reference
Documents & Media
Datasheets SI1012CR-T1-GE3
Environmental Information Material Compliance
REACH 211 Cert, SVHC
PCN Design/Specification Mult Dev Material Chgs 1/Jul/2021
HTML Datasheet SI1012CR-T1-GE3
EDA / CAD Models SI1012CR-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 396mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V
FET Feature -
Power Dissipation (Max) 240mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-75A
Package / Case SC-75, SOT-416
Base Part Number SI1012
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 3,000
Other Names SI1012CR-T1-GE3-ND
SI1012CR-T1-GE3TR