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10,516 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 131.00000 ¥131
10 117.90000 ¥1,179
25 111.84000 ¥2,796
100 91.89000 ¥9,189
500 75.91000 ¥37,955
1,000 59.92900 ¥59,929
2,500 55.93360 ¥139,834
5,000 54.48060 ¥272,403

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IRFD9120PBF

Datasheet
Digi-Key Part Number IRFD9120PBF-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number IRFD9120PBF
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Description MOSFET P-CH 100V 1A 4DIP
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Manufacturer Standard Lead Time 51 Weeks
Detailed Description

P-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

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Customer Reference
Documents & Media
Datasheets IRFD9120, SiHFD9120
HTML Datasheet IRFD9120, SiHFD9120
EDA / CAD Models IRFD9120PBF by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging Tube 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 25V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
Base Part Number IRFD9120
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 2,500
Other Names *IRFD9120PBF