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2,455 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 172.00000 ¥172
10 153.70000 ¥1,537
25 145.84000 ¥3,646
100 119.81000 ¥11,981
500 98.97000 ¥49,485
1,000 78.13400 ¥78,134
2,500 72.92520 ¥182,313
5,000 71.03080 ¥355,154

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IRFD123PBF

Datasheet
Digi-Key Part Number IRFD123PBF-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number IRFD123PBF
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Description MOSFET N-CH 100V 1.3A 4DIP
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Manufacturer Standard Lead Time 51 Weeks
Detailed Description

N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

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Customer Reference
Documents & Media
Datasheets IRFD123
HTML Datasheet IRFD123
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
Base Part Number IRFD123
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 2,500
Other Names *IRFD123PBF