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5,376 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 271.00000 ¥271
10 243.50000 ¥2,435
25 229.72000 ¥5,743
100 195.72000 ¥19,572
500 160.79600 ¥80,398
1,000 133.23100 ¥133,231
2,500 125.29560 ¥313,239

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IRFBG30PBF

Datasheet
Digi-Key Part Number IRFBG30PBF-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number IRFBG30PBF
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Description MOSFET N-CH 1000V 3.1A TO220AB
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Manufacturer Standard Lead Time 51 Weeks
Detailed Description

N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB

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Customer Reference
Documents & Media
Datasheets IRFBG30
Other Related Documents Packaging Information
PCN Design/Specification Mult Dev Material Chg 30/Aug/2019
HTML Datasheet Packaging Information
IRFBG30
EDA / CAD Models IRFBG30PBF by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number IRFBG30
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package 50
Other Names *IRFBG30PBF