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In Stock: 493
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Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 1,701.00000 ¥1,701
10 1,562.80000 ¥15,628
25 1,498.00000 ¥37,450
100 1,319.84000 ¥131,984

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TPH3212PS

Datasheet
Digi-Key Part Number TPH3212PS-ND
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Manufacturer

Transphorm

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Manufacturer Part Number TPH3212PS
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Description GANFET N-CH 650V 27A TO220AB
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Detailed Description

N-Channel 650V 27A (Tc) 104W (Tc) Through Hole TO-220AB

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Customer Reference
Documents & Media
Datasheets TPH3212PS
Product Training Modules GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies
Featured Product TDTTP2500P100-KIT 2.5 kW Totem-Pole PFC GaN Eval Board
PCN Obsolescence/ EOL TPH32/TPH32 02/Mar/2021
HTML Datasheet TPH3212PS
Simulation Models TPH3212PS Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Transphorm
Series -
Packaging Tube 
Part Status Last Time Buy
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 17A, 8V
Vgs(th) (Max) @ Id 2.6V @ 400uA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V
Vgs (Max) ±18V
Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 400V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number TPH3212
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
California Prop 65
For Use With

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Additional Resources
Standard Package 50