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TP65H050WS N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3
Price & Procurement
262 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 1,785.00000 ¥1,785
10 1,639.80000 ¥16,398
25 1,571.92000 ¥39,298
100 1,359.48000 ¥135,948
250 1,316.99600 ¥329,249
500 1,232.02800 ¥616,014
1,000 1,130.06700 ¥1,130,067
2,500 1,062.09280 ¥2,655,232
5,000 1,019.60900 ¥5,098,045

Submit a request for quotation on quantities greater than those displayed.

TP65H050WS

Datasheet
Digi-Key Part Number TP65H050WS-ND
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Manufacturer

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Manufacturer Part Number TP65H050WS
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Description GANFET N-CH 650V 34A TO247-3
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3

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Product Attributes
Type Description Select All
Categories
Manufacturer Transphorm
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 400V
FET Feature -
Power Dissipation (Max) 119W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
California Prop 65
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Additional Resources
Standard Package 30