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TP65H035WS N-Channel 650V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3
Price & Procurement
447 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 2,178.00000 ¥2,178
10 2,001.50000 ¥20,015
25 1,918.48000 ¥47,962
100 1,659.24000 ¥165,924
250 1,607.38000 ¥401,845
500 1,503.68000 ¥751,840
1,000 1,379.23800 ¥1,379,238
2,500 1,296.27520 ¥3,240,688
5,000 1,244.42440 ¥6,222,122

Submit a request for quotation on quantities greater than those displayed.

TP65H035WS

Datasheet
Digi-Key Part Number TP65H035WS-ND
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Manufacturer

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Manufacturer Part Number TP65H035WS
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Description GANFET N-CH 650V 46.5A TO247-3
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 650V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3

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Product Attributes
Type Description Select All
Categories
Manufacturer Transphorm
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 400V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
California Prop 65
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Additional Resources
Standard Package 30