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XPH4R10ANB,L1XHQ N-Channel 100V 70A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)
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9,783 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 281.00000 ¥281
10 251.90000 ¥2,519
25 237.68000 ¥5,942
100 202.49000 ¥20,249
500 166.36000 ¥83,180
1,000 137.84100 ¥137,841
2,500 129.63120 ¥324,078

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Alternate Package
  • Tape & Reel (TR)  : 264-XPH4R10ANBL1XHQTR-ND
  • Minimum Quantity: 5,000
  • Quantity Available: 5,000 - Immediate
  • Unit Price: ¥129.63140

XPH4R10ANB,L1XHQ

Digi-Key Part Number 264-XPH4R10ANBL1XHQCT-ND
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Manufacturer

Toshiba Semiconductor and Storage

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Manufacturer Part Number XPH4R10ANB,L1XHQ
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Description MOSFET N-CH 100V 70A 8SOP
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Manufacturer Standard Lead Time 52 Weeks
Detailed Description

N-Channel 100V 70A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)

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Customer Reference
Documents & Media
EDA / CAD Models XPH4R10ANB,L1XHQ by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 70A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4970pF @ 10V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-SOIC (0.197", 5.00mm Width)
Base Part Number XPH4R10
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names 264-XPH4R10ANBL1XHQCT