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TPWR6003PL,L1Q N-Channel 30V 150A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance
Price & Procurement
34,871 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 306.00000 ¥306
10 274.60000 ¥2,746
25 259.64000 ¥6,491
100 207.70000 ¥20,770
250 196.16000 ¥49,040
500 184.62200 ¥92,311
1,000 158.08300 ¥158,083
2,500 155.77480 ¥389,437

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : 264-TPWR6003PLL1QTR-ND
  • Minimum Quantity: 5,000
  • Quantity Available: 30,000 - Immediate
  • Unit Price: ¥141.92820

TPWR6003PL,L1Q

Datasheet
Digi-Key Part Number 264-TPWR6003PLL1QCT-ND
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Manufacturer

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Manufacturer Part Number TPWR6003PL,L1Q
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Description PB-F POWER MOSFET TRANSISTOR DSO
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Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 30V 150A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance

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Documents & Media
Datasheets TPWR6003PL
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 600µOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 15V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerWDFN
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 264-TPWR6003PLL1QCT