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TPW4R50ANH,L1Q N-Channel 100V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
Price & Procurement
5,188 In Stock
Can ship immediately
 

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All prices are in JPY.
Price Break Unit Price Extended Price
1 315.00000 ¥315
10 282.90000 ¥2,829
25 267.00000 ¥6,675
100 227.45000 ¥22,745
500 186.87000 ¥93,435
1,000 154.83500 ¥154,835
2,500 145.61320 ¥364,033

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Alternate Package
  • Tape & Reel (TR)  : TPW4R50ANHL1QTR-ND
  • Minimum Quantity: 5,000
  • Quantity Available: 5,000 - Immediate
  • Unit Price: ¥145.61340
  • Digi-Reel®  : TPW4R50ANHL1QDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 5,188 - Immediate
  • Unit Price: Digi-Reel®

TPW4R50ANH,L1Q

Datasheet
Digi-Key Part Number TPW4R50ANHL1QCT-ND
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Manufacturer

Toshiba Semiconductor and Storage

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Manufacturer Part Number TPW4R50ANH,L1Q
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Description MOSFET N-CH 100V 92A 8DSOP
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Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 100V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance

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Customer Reference
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Datasheets TPW4R50ANH
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EDA / CAD Models TPW4R50ANH by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 50V
FET Feature -
Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerVDFN
Base Part Number TPW4R50
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names TPW4R50ANHL1QCT