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TPW1R306PL,L1Q N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance
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All prices are in JPY.
Price Break Unit Price Extended Price
1 345.00000 ¥345.00
10 309.10000 ¥3,091.00
25 292.20000 ¥7,305.00
100 253.22000 ¥25,322.00
500 215.56400 ¥107,782.00
1,000 181.80200 ¥181,802.00
2,500 177.07960 ¥442,699.00

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Alternate Package
  • Tape & Reel (TR)  : TPW1R306PLL1QTR-ND
  • Minimum Quantity: 5,000
  • Quantity Available: 0
  • Unit Price: ¥177.07960

TPW1R306PL,L1Q

Datasheet
Digi-Key Part Number TPW1R306PLL1QCT-ND
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Manufacturer

Toshiba Semiconductor and Storage

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Manufacturer Part Number TPW1R306PL,L1Q
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Description MOSFET N-CH 60V 260A 8DSOP
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Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance

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Customer Reference
Documents & Media
Datasheets TPW1R306PL Datasheet
Featured Product Server Solutions
EDA / CAD Models TPW1R306PL by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8100pF @ 30V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerVDFN
Base Part Number TPW1R306
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names TPW1R306PLL1QCT