TPN4R806PL,L1Q N-Channel 60V 72A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
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All prices are in JPY.
Price Break Unit Price Extended Price
1 124.00000 ¥124
10 110.10000 ¥1,101
100 85.82000 ¥8,582
500 70.89800 ¥35,449
1,000 55.97200 ¥55,972
2,000 52.24050 ¥104,481

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Alternate Package

TPN4R806PL,L1Q

Datasheet
Digi-Key Part Number 264-TPN4R806PLL1QCT-ND
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Manufacturer

Toshiba Semiconductor and Storage

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Manufacturer Part Number TPN4R806PL,L1Q
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Description MOSFET N-CH 60V 72A 8TSON
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Manufacturer Standard Lead Time 24 Weeks
Detailed Description

N-Channel 60V 72A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

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Customer Reference
Documents & Media
Datasheets TPN4R806PL
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Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2770pF @ 30V
FET Feature -
Power Dissipation (Max) 630mW (Ta), 104W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN
Base Part Number TPN4R806
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 264-TPN4R806PLL1QCT