TPH1R306PL,L1Q N-Channel 60V 100A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)
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All prices are in JPY.
Price Break Unit Price Extended Price
1 233.00000 ¥233
10 209.40000 ¥2,094
100 168.34000 ¥16,834
500 138.30800 ¥69,154
1,000 114.60000 ¥114,600
2,000 107.77400 ¥215,548

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Alternate Package

TPH1R306PL,L1Q

Datasheet
Digi-Key Part Number 264-TPH1R306PLL1QCT-ND
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Manufacturer

Toshiba Semiconductor and Storage

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Manufacturer Part Number TPH1R306PL,L1Q
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Description MOSFET N-CH 60V 100A 8SOP
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Manufacturer Standard Lead Time 32 Weeks
Detailed Description

N-Channel 60V 100A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)

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Customer Reference
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Datasheets TPH1R306PL
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Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.34mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8100pF @ 30V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
Base Part Number TPH1R306
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 264-TPH1R306PLL1QCT