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TK1R4S04PB,LXHQ N-Channel 40V 120A (Ta) 180W (Tc) Surface Mount DPAK+
Price & Procurement
3,761 In Stock
Can ship immediately
 

Quantity

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All prices are in JPY.
Price Break Unit Price Extended Price
1 242.00000 ¥242
10 217.40000 ¥2,174
25 205.08000 ¥5,127
100 174.75000 ¥17,475
500 143.57200 ¥71,786
1,000 118.95900 ¥118,959

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Alternate Package
  • Tape & Reel (TR)  : 264-TK1R4S04PBLXHQTR-ND
  • Minimum Quantity: 2,000
  • Quantity Available: 2,000 - Immediate
  • Unit Price: ¥111.87350

TK1R4S04PB,LXHQ

Datasheet
Digi-Key Part Number 264-TK1R4S04PBLXHQCT-ND
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Manufacturer

Toshiba Semiconductor and Storage

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Manufacturer Part Number TK1R4S04PB,LXHQ
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Description MOSFET N-CH 40V 120A DPAK
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 40V 120A (Ta) 180W (Tc) Surface Mount DPAK+

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Customer Reference
Documents & Media
Datasheets TK1R4S04PB
Featured Product Server Solutions
EDA / CAD Models TK1R4S04PB,LXHQ by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 60A, 6V
Vgs(th) (Max) @ Id 3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 10V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number TK1R4S04
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names 264-TK1R4S04PBLXHQCT