CSD25213W10 P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
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17,725 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 58.00000 ¥58
10 46.80000 ¥468
25 42.80000 ¥1,070
100 31.84000 ¥3,184
500 23.88000 ¥11,940
1,000 17.91000 ¥17,910

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Alternate Package
  • Tape & Reel (TR)  : 296-40004-2-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 15,000 - Immediate
  • Unit Price: ¥16.41767
  • Digi-Reel®  : 296-40004-6-ND
  • Minimum Quantity: 1
  • Quantity Available: 17,725 - Immediate
  • Unit Price: Digi-Reel®

CSD25213W10

Datasheet
Digi-Key Part Number 296-40004-1-ND
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Manufacturer

Texas Instruments

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Manufacturer Part Number CSD25213W10
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Description MOSFET P-CH 20V 1.6A 4DSBGA
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Manufacturer Standard Lead Time 35 Weeks
Detailed Description

P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)

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Customer Reference
Documents & Media
Datasheets CSD25213W10
Featured Product Power Management
PCN Design/Specification DSBGA/uSIP 22/Jun/2016
DSBGA/Usip 14/Sep/2016
PCN Packaging Carrier Tape 28/Aug/2018
Manufacturer Product Page CSD25213W10 Specifications
EDA / CAD Models CSD25213W10 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Texas Instruments
Series NexFET™
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 47mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 4.5V
Vgs (Max) -6V
Input Capacitance (Ciss) (Max) @ Vds 478pF @ 10V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-DSBGA (1x1)
Package / Case 4-UFBGA, DSBGA
Base Part Number CSD25213
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 296-40004-1