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STP5NK80Z N-Channel 800V 4.3A (Tc) 110W (Tc) Through Hole TO-220AB
Price & Procurement

All prices are in JPY.
Price Break Unit Price Extended Price
1 212.00000 ¥212
10 190.10000 ¥1,901
50 179.38000 ¥8,969
100 152.83000 ¥15,283
500 125.56800 ¥62,784
2,500 96.86600 ¥242,165
5,000 95.67060 ¥478,353

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number 497-7527-5-ND
Copy   497-7527-5-ND
Quantity Available 5,370
Can ship immediately

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Manufacturer Part Number


Copy   STP5NK80Z
Description MOSFET N-CH 800V 4.3A TO-220
Copy   MOSFET N-CH 800V 4.3A TO-220
Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 800V 4.3A (Tc) 110W (Tc) Through Hole TO-220AB

Copy   N-Channel 800V 4.3A (Tc) 110W (Tc) Through Hole TO-220AB
Documents & Media
Datasheets STP5NK80Z(FP)
Other Related Documents STP5NK80Z View All Specifications
Product Training Modules STMicroelectronics ST MOSFETs
EDA / CAD Models ? Download from Ultra Librarian
Product Attributes Select All
Manufacturer STMicroelectronics
Series PowerMESH™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 2.15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 45.5nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
Additional Resources
Standard Package ? 50
Other Names 497-7527-5

02:24:12 6/18/2019