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STP5NK100Z N-Channel 1000V 3.5A (Tc) 125W (Tc) Through Hole TO-220AB
Price & Procurement
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 349.00000 ¥349
10 313.80000 ¥3,138
25 296.00000 ¥7,400
100 252.19000 ¥25,219
500 207.19600 ¥103,598
2,500 159.83800 ¥399,595
5,000 153.91800 ¥769,590

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number 497-4382-5-ND
Copy   497-4382-5-ND
Quantity Available 7,042
Can ship immediately
Manufacturer

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Manufacturer Part Number

STP5NK100Z

Copy   STP5NK100Z
Description MOSFET N-CH 1KV 3.5A TO-220
Copy   MOSFET N-CH 1KV 3.5A TO-220
Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 1000V 3.5A (Tc) 125W (Tc) Through Hole TO-220AB

Copy   N-Channel 1000V 3.5A (Tc) 125W (Tc) Through Hole TO-220AB
Documents & Media
Datasheets STx5NK100Z
Other Related Documents STP5NK100Z View All Specifications
Product Training Modules STMicroelectronics ST MOSFETs
Simulation Models STP5NK100Z Spice Model
EDA / CAD Models ? Download from Ultra Librarian
Product Attributes Select All
Categories
Manufacturer STMicroelectronics
Series SuperMESH3™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.7Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1154pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number STP5N
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 50
Other Names 497-4382-5

12:46:13 8/24/2019