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IRF630 N-Channel 200V 9A (Tc) 75W (Tc) Through Hole TO-220AB
Price & Procurement
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 128.00000 ¥128
10 114.00000 ¥1,140
50 108.22000 ¥5,411
100 88.89000 ¥8,889
500 73.42800 ¥36,714
2,500 54.10560 ¥135,264
5,000 51.52880 ¥257,644

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number 497-2757-5-ND
Copy   497-2757-5-ND
Quantity Available 19,112
Can ship immediately
Manufacturer

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Manufacturer Part Number

IRF630

Copy   IRF630
Description MOSFET N-CH 200V 9A TO-220
Copy   MOSFET N-CH 200V 9A TO-220
Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 200V 9A (Tc) 75W (Tc) Through Hole TO-220AB

Copy   N-Channel 200V 9A (Tc) 75W (Tc) Through Hole TO-220AB
Documents & Media
Datasheets IRF630(FP)
Other Related Documents IRF630 View All Specifications
Product Training Modules STMicroelectronics ST MOSFETs
EDA / CAD Models ? Download from Ultra Librarian
Product Attributes Select All
Categories
Manufacturer STMicroelectronics
Series MESH OVERLAY™ II
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 50
Other Names 497-2757-5

22:21:58 6/18/2019