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All prices are in JPY.
Price Break Unit Price Extended Price
1 937.00000 ¥937
10 847.30000 ¥8,473
25 807.96000 ¥20,199
100 701.55000 ¥70,155
500 610.90000 ¥305,450
1,000 537.45000 ¥537,450

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SCT3120ALGC11

Datasheet
Digi-Key Part Number SCT3120ALGC11-ND
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Manufacturer

Rohm Semiconductor

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Manufacturer Part Number SCT3120ALGC11
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Description SICFET N-CH 650V 21A TO247N
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Detailed Description

N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Rohm Semiconductor
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id 5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 18V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 500V
FET Feature -
Power Dissipation (Max) 103W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Part Number SCT3120
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 450