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121 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 1,757.00000 ¥1,757.00
10 1,614.90000 ¥16,149.00
25 1,548.04000 ¥38,701.00
100 1,363.94000 ¥136,394.00
500 1,213.31600 ¥606,658.00
1,000 1,141.04900 ¥1,141,049.00

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SCT3080KRC14

Datasheet
Digi-Key Part Number 846-SCT3080KRC14-ND
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Manufacturer

Rohm Semiconductor

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Manufacturer Part Number SCT3080KRC14
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Description SICFET N-CH 1200V 31A TO247-4L
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Manufacturer Standard Lead Time 17 Weeks
Detailed Description

N-Channel 1200V 31A (Tc) 165W Through Hole TO-247-4L

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Customer Reference
Documents & Media
Datasheets SCT3080KR
Featured Product SiC Power MOSFETs
EDA / CAD Models SCT3080KRC14 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Rohm Semiconductor
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id 5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 18V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 785pF @ 800V
FET Feature -
Power Dissipation (Max) 165W
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
Base Part Number SCT3080
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 240
Other Names 846-SCT3080KRC14
SCT3080KRC14-ND