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310 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 1,267.00000 ¥1,267
10 1,144.70000 ¥11,447
25 1,091.48000 ¥27,287
100 947.70000 ¥94,770
500 825.24600 ¥412,623
1,000 726.02200 ¥726,022

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SCT3080ALGC11

Datasheet
Digi-Key Part Number SCT3080ALGC11-ND
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Manufacturer

Rohm Semiconductor

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Manufacturer Part Number SCT3080ALGC11
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Description SICFET N-CH 650V 30A TO247N
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Detailed Description

N-Channel 650V 30A (Tc) 134W (Tc) Through Hole TO-247N

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Rohm Semiconductor
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id 5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 18V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 571pF @ 500V
FET Feature -
Power Dissipation (Max) 134W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Part Number SCT3080
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 450