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NTR5198NLT1G N-Channel 60V 1.7A (Ta) 900mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 49.00000 ¥49
10 34.50000 ¥345
25 33.04000 ¥826
100 17.41000 ¥1,741
500 15.42400 ¥7,712
1,000 12.00400 ¥12,004

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : NTR5198NLT1GOSTR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 0
  • Unit Price: ¥10.74333

NTR5198NLT1G

Datasheet
Digi-Key Part Number NTR5198NLT1GOSCT-ND
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Manufacturer

ON Semiconductor

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Manufacturer Part Number NTR5198NLT1G
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Description MOSFET N-CH 60V 1.7A SOT23-3
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Manufacturer Standard Lead Time 48 Weeks
Detailed Description

N-Channel 60V 1.7A (Ta) 900mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets NTR5198NL
Environmental Information Material Declaration NTR5198NLT1G
PCN Design/Specification SOT23 16/Sep/2016
PCN Assembly/Origin Mold Compound 07/Sep/2019
HTML Datasheet NTR5198NL
EDA / CAD Models NTR5198NLT1G by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 155mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 182pF @ 25V
FET Feature -
Power Dissipation (Max) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number NTR5198
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names NTR5198NLT1GOSCT