NTK3139PT1G P-Channel 20V 660mA (Ta) 310mW (Ta) Surface Mount SOT-723
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All prices are in JPY.
Price Break Unit Price Extended Price
1 65.00000 ¥65
10 48.50000 ¥485
100 30.21000 ¥3,021
500 20.67000 ¥10,335
1,000 15.90000 ¥15,900
2,000 14.30950 ¥28,619

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Alternate Package
  • Tape & Reel (TR)  : NTK3139PT1GOSTR-ND
  • Minimum Quantity: 4,000
  • Quantity Available: 0
  • Unit Price: ¥14.30975
  • Tape & Reel (TR)  : NTK3139PT5GOSTR-ND
  • Minimum Quantity: 8,000
  • Quantity Available: 0
  • Unit Price: ¥13.51475
  • Cut Tape (CT)  : NTK3139PT5GOSCT-ND
  • Minimum Quantity: 1
  • Quantity Available: 0
  • Unit Price: ¥65.00000

NTK3139PT1G

Datasheet
Digi-Key Part Number NTK3139PT1GOSCT-ND
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Manufacturer

onsemi

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Manufacturer Part Number NTK3139PT1G
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Description MOSFET P-CH 20V 660MA SOT723
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Detailed Description

P-Channel 20V 660mA (Ta) 310mW (Ta) Surface Mount SOT-723

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Customer Reference
Documents & Media
Datasheets NTK3139P
Environmental Information Material Declaration NTK3139PT1G
onsemi RoHS3
onsemi REACH219
HTML Datasheet NTK3139P
EDA / CAD Models NTK3139PT1G by SnapEDA
NTK3139PT1G by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer onsemi
Series -
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 480mOhm @ 780mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Vgs (Max) ±6V
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 16V
FET Feature -
Power Dissipation (Max) 310mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-723
Package / Case SOT-723
Base Part Number NTK3139
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names NTK3139PT1GOSCT