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NTHL060N090SC1 N-Channel 900V 46A (Tc) 221W (Tc) Through Hole TO-247-3
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138 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 1,452.00000 ¥1,452.00
10 1,311.90000 ¥13,119.00
100 1,086.18000 ¥108,618.00
500 1,007.43000 ¥503,715.00

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NTHL060N090SC1

Datasheet
Digi-Key Part Number 488-NTHL060N090SC1-ND
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Manufacturer

ON Semiconductor

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Manufacturer Part Number NTHL060N090SC1
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Description SICFET N-CH 900V 46A TO247-3
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Detailed Description

N-Channel 900V 46A (Tc) 221W (Tc) Through Hole TO-247-3

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Customer Reference
Documents & Media
Datasheets NTHL060N090SC1
Featured Product 900 V Silicon Carbide (SiC) MOSFETs
PCN Design/Specification Dimension/Color Change 24/Feb/2021
Mult Dev DS Chg 6/May/2021
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 84mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 87nC @ 15V
Vgs (Max) +19V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 450V
FET Feature -
Power Dissipation (Max) 221W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Part Number NTHL060
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 30
Other Names 488-NTHL060N090SC1