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NSS60600MZ4T1G Bipolar (BJT) Transistor PNP 60V 6A 100MHz 800mW Surface Mount SOT-223 (TO-261)
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All prices are in JPY.
Price Break Unit Price Extended Price
1 75.00000 ¥75.00
10 64.50000 ¥645.00
25 60.20000 ¥1,505.00
100 48.15000 ¥4,815.00
500 37.83200 ¥18,916.00

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Alternate Package
  • Tape & Reel (TR)  : NSS60600MZ4T3GOSTR-ND
  • Minimum Quantity: 4,000  Non-Stock 
  • Quantity Available: 0
  • Unit Price: ¥31.85675

NSS60600MZ4T1G

Datasheet
Digi-Key Part Number NSS60600MZ4T1GOSCT-ND
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Manufacturer

ON Semiconductor

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Manufacturer Part Number NSS60600MZ4T1G
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Description TRANS PNP 60V 6A SOT-223
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Detailed Description

Bipolar (BJT) Transistor PNP 60V 6A 100MHz 800mW Surface Mount SOT-223 (TO-261)

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Customer Reference
Documents & Media
Datasheets NSS60600MZ4T1G
Product Training Modules Low Vce(sat) BJT Power Savings
Environmental Information Material Declaration NSS60600MZ4T1G
PCN Design/Specification Wire Bond 01/Dec/2010
PCN Assembly/Origin Mult Dev Assembly 27/Jul/2020
PCN Packaging Covering Tape/Material Chg 20/May/2016
HTML Datasheet NSS60600MZ4T1G
EDA / CAD Models NSS60600MZ4T1G by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT) 
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 6A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 350mV @ 600mA, 6A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 2V
Power - Max 800mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261)
Base Part Number NSS60600
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names NSS60600MZ4T1GOSCT