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KSD526Y Bipolar (BJT) Transistor NPN 80V 4A 8MHz 30W Through Hole TO-220-3
Price & Procurement
1,129 In Stock
Can ship immediately Factory Stock : 7,200
 

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All prices are in JPY.
Price Break Unit Price Extended Price
1 112.00000 ¥112
10 98.70000 ¥987
25 92.76000 ¥2,319
100 75.72000 ¥7,572
500 59.85800 ¥29,929
1,000 49.41100 ¥49,411

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KSD526Y

Datasheet
Digi-Key Part Number KSD526Y-ND
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Manufacturer

ON Semiconductor

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Manufacturer Part Number KSD526Y
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Description TRANS NPN 80V 4A TO220-3
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Manufacturer Standard Lead Time 2 Weeks
Detailed Description

Bipolar (BJT) Transistor NPN 80V 4A 8MHz 30W Through Hole TO-220-3

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Customer Reference
Documents & Media
Datasheets KSD526
TO220B03 Pkg Drawing
Environmental Information Material Declaration KSD526Y
PCN Design/Specification Lead Frame Dimensions 29/Nov/2007
Logo 17/Aug/2017
PCN Assembly/Origin Mult Dev 21/Apr/2929
PCN Packaging Mult Devices 24/Oct/2017
HTML Datasheet TO220B03 Pkg Drawing
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series -
Packaging Bulk 
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max) 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 5V
Power - Max 30W
Frequency - Transition 8MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Base Part Number KSD526
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 200