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IRL640A N-Channel 200V 18A (Tc) 110W (Tc) Through Hole TO-220-3
Price & Procurement
91,466 In Stock
Can ship immediately Factory Stock : 12,000
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 170.00000 ¥170
10 152.60000 ¥1,526
25 144.84000 ¥3,621
100 108.63000 ¥10,863
250 107.59200 ¥26,898
500 92.07400 ¥46,037
1,000 75.00500 ¥75,005
2,500 73.97000 ¥184,925
5,000 72.41780 ¥362,089

Submit a request for quotation on quantities greater than those displayed.

IRL640A

Datasheet
Digi-Key Part Number IRL640A-ND
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Manufacturer

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Manufacturer Part Number IRL640A
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Description MOSFET N-CH 200V 18A TO-220
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Manufacturer Standard Lead Time 4 Weeks
Detailed Description

N-Channel 200V 18A (Tc) 110W (Tc) Through Hole TO-220-3

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Documents & Media
Datasheets IRL640A
TO220B03 Pkg Drawing
Environmental Information Material Declaration IRL640A
PCN Design/Specification Logo 17/Aug/2017
PCN Assembly/Origin MFG Site Addition 09/Mar/2020
PCN Packaging Tape and Box/Reel Barcode Update 07/Aug/2014
Mult Devices 24/Oct/2017
HTML Datasheet TO220B03 Pkg Drawing
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 180mOhm @ 9A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1705pF @ 25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Part Number IRL64
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1,000