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FDS2672 N-Channel 200V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
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2,274 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 233.00000 ¥233.00
10 208.50000 ¥2,085.00
25 196.64000 ¥4,916.00
100 167.54000 ¥16,754.00
500 137.64800 ¥68,824.00
1,000 125.13400 ¥125,134.00

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Alternate Package
  • Tape & Reel (TR)  : FDS2672TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 0
  • Unit Price: ¥125.13360
  • Cut Tape (CT)  : FDS2672CT-ND
  • Minimum Quantity: 1
  • Quantity Available: 2,274 - Immediate
  • Unit Price: ¥233.00000

FDS2672

Datasheet
Digi-Key Part Number FDS2672DKR-ND
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Manufacturer

ON Semiconductor

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Manufacturer Part Number FDS2672
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Description MOSFET N-CH 200V 3.9A 8SOIC
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Detailed Description

N-Channel 200V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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Customer Reference
Documents & Media
Datasheets FDS2672
Environmental Information Material Declaration FDS2672
PCN Design/Specification Mold Compound 12/Dec/2007
Logo 17/Aug/2017
PCN Assembly/Origin FDSyy Dev Source Add 18/Jul/2018
PCN Packaging Mult Devices 24/Oct/2017
Mult MSL1 Pkg Rev 20/Dec/2018
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series UltraFET™
Packaging Digi-Reel® 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2535pF @ 100V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number FDS26
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names FDS2672DKR