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IXTA1N200P3HV N-Channel 2000V 1A (Tc) 125W (Tc) Surface Mount TO-263 (IXTA)
Price & Procurement
1,099 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 721.00000 ¥721
10 651.10000 ¥6,511
25 620.76000 ¥15,519
100 514.76000 ¥51,476
250 484.47600 ¥121,119
500 454.19600 ¥227,098
1,000 408.77600 ¥408,776
2,500 393.63640 ¥984,091
5,000 372.44060 ¥1,862,203

Submit a request for quotation on quantities greater than those displayed.

IXTA1N200P3HV

Datasheet
Digi-Key Part Number IXTA1N200P3HV-ND
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Manufacturer

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Manufacturer Part Number IXTA1N200P3HV
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Description MOSFET N-CH 2000V 1A TO-263HV
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Manufacturer Standard Lead Time 24 Weeks
Detailed Description

N-Channel 2000V 1A (Tc) 125W (Tc) Surface Mount TO-263 (IXTA)

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Documents & Media
Datasheets IXTx1N200P3(HV)
HTML Datasheet IXTx1N200P3(HV)
Product Attributes
Type Description Select All
Categories
Manufacturer IXYS
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (IXTA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
California Prop 65
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Additional Resources
Standard Package 50