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IRLB8314PBF N-Channel 30V 171A (Tc) 125W (Tc) Through Hole TO-220-3
Price & Procurement
183 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 106.00000 ¥106
10 93.60000 ¥936
25 87.92000 ¥2,198
100 63.81000 ¥6,381
250 61.53600 ¥15,384
500 53.31000 ¥26,655
1,000 45.37100 ¥45,371
2,500 42.53560 ¥106,339
5,000 38.28200 ¥191,410

Submit a request for quotation on quantities greater than those displayed.

IRLB8314PBF

Datasheet
Digi-Key Part Number IRLB8314PBF-ND
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Manufacturer

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Manufacturer Part Number IRLB8314PBF
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Description MOSFET N-CH 30V 171A TO220
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

N-Channel 30V 171A (Tc) 125W (Tc) Through Hole TO-220-3

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Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 68A, 10V
Vgs(th) (Max) @ Id 2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5050pF @ 15V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names 64-0101PBF
64-0101PBF-ND
SP001572766