IRL2505PBF N-Channel 55V 104A (Tc) 200W (Tc) Through Hole TO-220AB
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4,000 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 259.00000 ¥259
10 232.20000 ¥2,322
25 219.08000 ¥5,477
100 186.67000 ¥18,667
500 153.36400 ¥76,682
1,000 133.36100 ¥133,361

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Digi-Key Part Number IRL2505PBF-ND

Infineon Technologies

Manufacturer Part Number IRL2505PBF
Description MOSFET N-CH 55V 104A TO220AB
Detailed Description

N-Channel 55V 104A (Tc) 200W (Tc) Through Hole TO-220AB

Customer Reference
Documents & Media
Datasheets IRL2505PbF
Other Related Documents Part Number Guide
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
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PCN Design/Specification Mult Dev Label Chgs Aug/2020
Mult Dev Lot Chgs 25/May/2021
PCN Assembly/Origin Mult Dev Wafer Site Chg 18/Dec/2020
PCN Packaging Mult Device Standard Label Chg 29/Sep/2017
HTML Datasheet IRL2505PbF
EDA / CAD Models IRL2505PBF by Ultra Librarian
Simulation Models IRL2505PBF Saber Model
Product Attributes
Type Description Select All
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 54A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number IRL2505
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
Additional Resources
Standard Package 50
Other Names *IRL2505PBF