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IRL2505PBF N-Channel 55V 104A (Tc) 200W (Tc) Through Hole TO-220AB
Price & Procurement
3,012 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 257.00000 ¥257
10 231.20000 ¥2,312
25 218.16000 ¥5,454
100 170.18000 ¥17,018
250 165.80800 ¥41,452
500 143.99400 ¥71,997
1,000 122.17600 ¥122,176
2,500 120.43080 ¥301,077
5,000 111.70380 ¥558,519

Submit a request for quotation on quantities greater than those displayed.

IRL2505PBF

Datasheet
Digi-Key Part Number IRL2505PBF-ND
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Manufacturer

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Manufacturer Part Number IRL2505PBF
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Description MOSFET N-CH 55V 104A TO-220AB
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 55V 104A (Tc) 200W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRL2505PbF
Other Related Documents Part Number Guide
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev No Format/Barcode Label 15/Jan/2019
PCN Packaging Mult Device Standard Label Chg 29/Sep/2017
HTML Datasheet IRL2505PbF
Simulation Models IRL2505PBF Saber Model
EDA / CAD Models Download from Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 54A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRL2505PBF
SP001567114