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IRFB7530PBF N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB
Price & Procurement
3,902 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 306.00000 ¥306
10 274.60000 ¥2,746
25 259.64000 ¥6,491
100 207.70000 ¥20,770
250 196.16000 ¥49,040
500 184.62200 ¥92,311
1,000 158.08300 ¥158,083
2,500 155.77480 ¥389,437
5,000 141.92820 ¥709,641

Submit a request for quotation on quantities greater than those displayed.

IRFB7530PBF

Datasheet
Digi-Key Part Number IRFB7530PBF-ND
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Manufacturer

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Manufacturer Part Number IRFB7530PBF
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Description MOSFET N CH 60V 195A TO-220AB
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRF(B,S,SL)7530PbF
Other Related Documents IR Part Numbering System
Featured Product 60 V StrongIRFET Power MOSFETs
Data Processing Systems
PCN Packaging Mult Dev Label Chgs 18/Feb/2020
EDA / CAD Models IRFB7530PBF by SnapEDA
Simulation Models IRFB7530 Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®, StrongIRFET™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 411nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13703pF @ 25V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names SP001575524